Physics:Electron-longitudinal acoustic phonon interaction

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The electron-longitudinal acoustic phonon interaction is an interaction that can take place between an electron and a longitudinal acoustic (LA) phonon in a material such as a semiconductor.

Displacement operator of the LA phonon

The equations of motion of the atoms of mass M which locates in the periodic lattice is

Md2dt2un=k0(un1+un+12un),

where un is the displacement of the nth atom from their equilibrium positions.

Defining the displacement u of the th atom by u=xa, where x is the coordinates of the th atom and a is the lattice constant,

the displacement is given by ul=Aei(qaωt)

Then using Fourier transform:

Qq=1Nueiqa

and

u=1NqQqeiqa.

Since u is a Hermite operator,

u=12Nq(Qqeiqa+Qqeiqa)

From the definition of the creation and annihilation operator aq=q2Mωq(MωqQqiPq),aq=q2Mωq(MωqQq+iPq)

Qq is written as
Qq=2Mωq(aq+aq)

Then u expressed as

u=q2MNωq(aqeiqa+aqeiqa)

Hence, using the continuum model, the displacement operator for the 3-dimensional case is

u(r)=q2MNωqeq[aqeiqr+aqeiqr],

where eq is the unit vector along the displacement direction.

Interaction Hamiltonian

The electron-longitudinal acoustic phonon interaction Hamiltonian is defined as Hel

Hel=DacδVV=Dacdivu(r),

where Dac is the deformation potential for electron scattering by acoustic phonons.[1]

Inserting the displacement vector to the Hamiltonian results to

Hel=Dacq2MNωq(ieqq)[aqeiqraqeiqr]

Scattering probability

The scattering probability for electrons from |k to |k states is

P(k,k)=2πk,q|Hel| k,q2δ[ε(k)ε(k)ωq]
=2π|Dacq2MNωq(ieqq)nq+12121L3d3ruk(r)uk(r)ei(kk±q)r|2δ[ε(k)ε(k)ωq]

Replace the integral over the whole space with a summation of unit cell integrations

P(k,k)=2π(Dacq2MNωq|q|nq+1212I(k,k)δk,k±q)2δ[ε(k)ε(k)ωq],

where I(k,k)=ΩΩd3ruk(r)uk(r), Ω is the volume of a unit cell.

P(k,k)={2πDac22MNωq|q|2nq(k=k+q;absorption),2πDac22MNωq|q|2(nq+1)(k=kq;emission).

See also

Notes

  1. Hamaguchi, Chihiro (2017). Basic Semiconductor Physics. Graduate Texts in Physics (3 ed.). Springer. p. 292. doi:10.1007/978-3-319-66860-4. ISBN 978-3-319-88329-8. https://www.springer.com/gp/book/9783319668598. 

References