| Display title | Physics:Thermal oxidation |
| Default sort key | Thermal oxidation |
| Page length (in bytes) | 10,035 |
| Namespace ID | 3020 |
| Namespace | Physics |
| Page ID | 662612 |
| Page content language | en - English |
| Page content model | wikitext |
| Indexing by robots | Allowed |
| Number of redirects to this page | 0 |
| Counted as a content page | Yes |
| Page image |  |
| HandWiki item ID | None |
| Edit | Allow all users (infinite) |
| Move | Allow all users (infinite) |
| Page creator | imported>Raymond Straus |
| Date of page creation | 04:45, 5 February 2024 |
| Latest editor | imported>Raymond Straus |
| Date of latest edit | 04:45, 5 February 2024 |
| Total number of edits | 1 |
| Recent number of edits (within past 90 days) | 0 |
| Recent number of distinct authors | 0 |
Description | Content |
Article description: (description)
This attribute controls the content of the description and og:description elements. | In microfabrication, thermal oxidation is a way to produce a thin layer of oxide (usually silicon dioxide) on the surface of a wafer. The technique forces an oxidizing agent to diffuse into the wafer at high temperature and react with it. The rate of oxide growth is often predicted by the Deal–Grove... |
