| Display title | Physics:Floating body effect |
| Default sort key | Floating body effect |
| Page length (in bytes) | 4,371 |
| Namespace ID | 3020 |
| Namespace | Physics |
| Page ID | 428542 |
| Page content language | en - English |
| Page content model | wikitext |
| Indexing by robots | Allowed |
| Number of redirects to this page | 0 |
| Counted as a content page | Yes |
| HandWiki item ID | None |
| Edit | Allow all users (infinite) |
| Move | Allow all users (infinite) |
| Page creator | imported>JTerm |
| Date of page creation | 23:09, 26 June 2023 |
| Latest editor | imported>JTerm |
| Date of latest edit | 23:09, 26 June 2023 |
| Total number of edits | 1 |
| Recent number of edits (within past 90 days) | 0 |
| Recent number of distinct authors | 0 |
Description | Content |
Article description: (description)
This attribute controls the content of the description and og:description elements. | The floating body effect is the effect of dependence of the body potential of a transistor realized by the silicon on insulator (SOI) technology on the history of its biasing and the carrier recombination processes. The transistor's body forms a capacitor against the insulated substrate. The charge accumulates... |
