| Display title | Engineering:MESFET |
| Default sort key | Mesfet |
| Page length (in bytes) | 4,073 |
| Namespace ID | 3034 |
| Namespace | Engineering |
| Page ID | 831900 |
| Page content language | en - English |
| Page content model | wikitext |
| Indexing by robots | Allowed |
| Number of redirects to this page | 0 |
| Counted as a content page | Yes |
| HandWiki item ID | None |
| Edit | Allow all users (infinite) |
| Move | Allow all users (infinite) |
| Page creator | imported>Scavis |
| Date of page creation | 21:44, 4 February 2024 |
| Latest editor | imported>Scavis |
| Date of latest edit | 21:44, 4 February 2024 |
| Total number of edits | 1 |
| Recent number of edits (within past 90 days) | 0 |
| Recent number of distinct authors | 0 |
Description | Content |
Article description: (description)
This attribute controls the content of the description and og:description elements. | A MESFET (metal–semiconductor field-effect transistor) is a field-effect transistor semiconductor device similar to a JFET with a Schottky (metal–semiconductor) junction instead of a p–n junction for a gate. |
