| Display title | Engineering:Gunn diode |
| Default sort key | Gunn Diode |
| Page length (in bytes) | 14,326 |
| Namespace ID | 3034 |
| Namespace | Engineering |
| Page ID | 308928 |
| Page content language | en - English |
| Page content model | wikitext |
| Indexing by robots | Allowed |
| Number of redirects to this page | 0 |
| Counted as a content page | Yes |
| Page image |  |
| HandWiki item ID | None |
| Edit | Allow all users (infinite) |
| Move | Allow all users (infinite) |
| Page creator | imported>Rjetedi |
| Date of page creation | 18:00, 4 February 2024 |
| Latest editor | imported>Rjetedi |
| Date of latest edit | 18:00, 4 February 2024 |
| Total number of edits | 1 |
| Recent number of edits (within past 90 days) | 0 |
| Recent number of distinct authors | 0 |
Description | Content |
Article description: (description)
This attribute controls the content of the description and og:description elements. | A Gunn diode, also known as a transferred electron device (TED), is a form of diode, a two-terminal semiconductor electronic component, with negative resistance, used in high-frequency electronics. It is based on the "Gunn effect" discovered in 1962 by physicist J. B. Gunn. Its main uses are in electronic... |
