| Display title | Engineering:130 nm process |
| Default sort key | 130 nm process |
| Page length (in bytes) | 4,567 |
| Namespace ID | 3034 |
| Namespace | Engineering |
| Page ID | 178059 |
| Page content language | en - English |
| Page content model | wikitext |
| Indexing by robots | Allowed |
| Number of redirects to this page | 0 |
| Counted as a content page | Yes |
| HandWiki item ID | None |
| Edit | Allow all users (infinite) |
| Move | Allow all users (infinite) |
| Page creator | imported>WikiEd2 |
| Date of page creation | 10:19, 8 November 2022 |
| Latest editor | imported>WikiEd2 |
| Date of latest edit | 10:19, 8 November 2022 |
| Total number of edits | 1 |
| Recent number of edits (within past 90 days) | 0 |
| Recent number of distinct authors | 0 |
Description | Content |
Article description: (description)
This attribute controls the content of the description and og:description elements. | The 130 nm (0.13 μm) process refers to the level of MOSFET (CMOS) semiconductor process technology that was commercialized around the 2001–2002 timeframe, by leading semiconductor companies like Fujitsu, IBM, Intel, Texas Instruments, and TSMC.
The origin of the 130 nm value is historical, |
