Information for "Chemistry:Gallium arsenide"

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Display titleChemistry:Gallium arsenide
Default sort keyGallium arsenide
Page length (in bytes)49,286
Namespace ID3022
NamespaceChemistry
Page ID247073
Page content languageen - English
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Page imageGallium-arsenide-unit-cell-3D-balls.png
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Page creatorimported>Unex
Date of page creation00:13, 6 February 2024
Latest editorimported>Unex
Date of latest edit00:13, 6 February 2024
Total number of edits1
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Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar...
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